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簡(jiǎn)要描述：硒化鉍晶體 Bi2Se3（Bismuth Selenide）晶體尺寸：10毫米電學(xué)性能：拓?fù)浣^緣體晶體結(jié)構(gòu)：菱面體晶胞參數(shù)：a = b = 0.413, c = 2.856 nm, α = β = 90°, γ = 120°晶體類型：合成晶體純度：＞99.995%
產(chǎn)品型號(hào)： 廠商性質(zhì)：生產(chǎn)廠家更新時(shí)間：2024-06-04訪 問 量：1917詳細(xì)介紹
硒化鉍晶體 Bi2Se3(Bismuth Selenide)
晶體尺寸：10毫米
電學(xué)性能：拓?fù)浣^緣體
晶體結(jié)構(gòu)：菱面體
晶胞參數(shù)：a = b = 0.413, c = 2.856 nm, α = β = 90°, γ = 120°
晶體類型：合成
晶體純度：＞99.995%
X-ray diffraction on a Bi2Se3 single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 6 XRD peaks correspond, from left to right, to (00l) with l = 6, 9, 12, 15, 18, 21, 24
XRD of a single crystal Bi2Se3. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.
EDX of a single crystal Bi2Se3.
Raman of a single crystal Bi2Se3. Measurement with a 785nm Raman at room temperature.
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